On 13 November, Dr. Huaxing JIANG from the Hong Kong University of Science and Technology gave a talk entitled “Advanced Device Technology for Gallium Nitride Power Transistors “. At the seminar, Dr. Jiang introduced GaN-based power transistors as the next generation energy-efficient power converters, which can tremendously reduce the size and heat dissipations of power chargers for all kinds of personal electronics. In addition to the basic working mechanisms, Dr. Jiang has also presented a number of advanced device concepts and process technology for developing high-performance and reliable GaN power transistors, which are of paramount importance to the full commercialization of the extraordinary technology.

Dr. Huaxing Jiang is currently a Post-doctoral Fellow with the Hong Kong University of Science and Technology, where he received the Ph.D. degree in electronic and computer engineering in 2017. He has authored/co-authored over 40 peer-reviewed papers in international journals and conferences. His research interests include the design, fabrication and characterization of wide band-gap semiconductor based devices for power and radio frequency applications.