Prof. Chongyun Jiang (蔣崇雲) from Nankai University, visited IAPME on November 5, 2025, as part of the IAPME Seminar Series. During his visit, he delivered an insightful presentation titled “Weyl-Related Surface Circular Photogalvanic Effect in Nonsymmorphic-Symmetry ZrGeTe4 Semiconductor.” The seminar was hosted by Prof. Shen Lai, who extended the invitation to Prof. Jiang.
Prof. Jiang has been a Professor at Nankai University since 2019. His research interests focus on spintronics and photonics in low-dimensional semiconductors, with recent work on photogalvanic and anomalous Hall effects in van der Waals heterostructures. He has published his findings in high-impact journals including Nature Electronics, ACS Nano, and Laser & Photonics Reviews.
During his talk, Prof. Jiang discussed the surface circular photogalvanic effect (CPGE) in nonsymmorphic-symmetry ZrGeTe₄ semiconductors via a specific excitation and detection geometry. He demonstrated that the effect originates from asymmetric helicity-dependent optical transitions between two Kramers-Weyl nodes in the conduction and valence bands. The research confirms that Weyl-related surface CPGE is an intrinsic phenomenon that can be flexibly tuned with an in-plane electric field, highlighting the potential of Weyl semiconductors for functional topological devices.
The seminar provided attendees with deep insights into the circular photogalvanic effect (CPGE) in Weyl semiconductors, emphasizing the unique potential of low-dimensional semiconductors in next-generation optoelectronic applications.
