On 15 September 2025, Prof. Francis Chi-Chung Ling (凌志聰), from The University of Hong Kong, visited IAPME and delivered an insightful lecture titled “Defect Engineering of Functional Materials”. The presentation focused on the critical role of atomic-scale defects in tailoring material properties, sparking engaging discussions among attending institute members and students. The seminar was hosted by Prof. Shuang-Peng WANG, who extended the invitation to Prof. Ling.
Prof. Ling is a renowned scholar in the field of material physics, specializing in defect characterization and functionalization. He obtained his BSc, MPhil, and PhD from The University of Hong Kong (HKU) and has served there as Lecturer, Assistant Professor, and now become Tenured Associate Professor. Elected as a Fellow of the Institute of Physics, U.K. (F.Inst.P.) in 2006, he has also held significant administrative roles including Associate Dean of the Faculty of Science and the Senate Member at HKU. With over 204 SCI journal publications and more than 4500 citations, his work focuses on defect control for optimizing material performance and device applications.
During the seminar, Prof. Ling elaborated on how intrinsic and impurity defects can be engineered to modulate electrical, optical, magnetic, and dielectric properties. He presented three compelling case studies: enhancing oxide permittivity through newly formed acceptor-donor defect complexes; reducing the leakage current of SiC junction barrier Schottky diodes by 30 times via defect manipulation; and modulating luminescence intensity and saturated magnetization in Cu-doped ZnO by controlling defect level occupancy.
Following the presentation, Prof. Ling had an IAPME lab tour guided by Prof. Wang, the guest engaged in detailed discussions with researchers and students, and explored potential collaborative projects.
_cuva
_cuva
