Assistant Professor, Institute of Applied Physics and Materials Engineering
Ph.D., Nano Engineering, Sungkyunkwan University, 2018.
B.S., Metallic Materials, Dalian University of Technology, 2012.
Device physics of 2D materials
to be updated.
C Jiang, A Rasmita, H Ma, Q Tan, Z Zhang, Z Huang, S Lai, N Wang, S Liu, X Liu, T Yu, Q Xiong, W Gao “A room-temperature gate-tunable bipolar valley Hall effect in molybdenum disulfide/tungsten diselenide heterostructures” Nature Electronics 2022 5 23.
S Lai, H Liu, Z Zhang, J Zhao, X Feng, NZ Wang, C Tang, Y Liu, KS Novoselov, SA Yang, and W Gao “Third-order nonlinear Hall effect induced by the Berry-connection polarizability tensor” Nature Nanotechnology 2021 16 869.
S Lai, SK Jang, JH Cho, S Lee “Organic Field-Effect Transistors Integrated with Ti2CTx Electrodes” Nanoscale 2018 10 5191.
S Lai, S Byeon, SK Jang, J Lee, BH Lee, JH Park, YH Kim, S Lee “HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2” Nanoscale 2018 10 18758.
S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee “Surface group modification and carrier transport properties of layered transition metal carbides (Ti2CTx, T: -OH, -F and -O)” Nanoscale 2015 7 19390 (Web of Science Highly Cited Paper).